Gamma-ray irradiation and post-irradiation at room and elevated temperature response of pMOS dosimeters with thick gate oxides

• Published in: Nuclear Technology and Radiation Protection Vol. 26; no. 3; pp. 261 - 265
• Main Authors: Pejovic, Momcilo, Pejovic, Svetlana, Dolicanin, Edin, Lazarevic, Djordje
• Format: Journal Article
• Language: English
• Published: VINCA Institute of Nuclear Sciences 01-12-2011
• Subjects: absorbed dose; gamma-ray irradiation; pMOS dosimeter; threshold voltage shift
• ISSN: 1451-3994; 1452-8185
• DOI: 10.2298/NTRP1103261P

Gamma-ray irradiation and post-irradiation response at room and elevated
temperature have been studied for radiation sensitive pMOS transistors with
gate oxide thickness of 100 and 400 nm, respectively. Their response was
followed based on the changes in the threshold voltage shift which was
estimated on the basis of transfer characteristics in saturation. The
presence of radiation-induced fixed oxide traps and switching traps - which
lead to a change in the threshold voltage - was estimated from the
sub-threshold I-V curves, using the midgap technique. It was shown that fixed
oxide traps have a dominant influence on the change in the threshold voltage
shift during gamma-ray irradiation and annealing.
Istrazivan je odziv radijaciono osetljivih pMOS tranzistora cije su debljine
oksida 100 nm i 400 nm tokom gama zracenja i kasnijeg oporavka na sobnoj i
povisenoj temperaturi. Odziv ovih tranzistora je pracen na osnovu promene
napona koji je procenjivan iz prenosnih karakteristika u saturaciji.
Prisustvo centara u oksidu upravljacke elektrode kao i centara na
medjupovrsini silicijum-silicijumdioksid, koji dovode do promene napona praga,
procenjivani su tehnikom koja koristi pretpragovske strujno-naponske krive.
Pokazano je da dominantnu ulogu u promeni napona praga tokom ozracivanja i
kasnije oporavka imaju centri zahvata u oksidu gejta.
PR Projekat Ministarstva nauke Republike Srbije, br. 171007