Silicon Nitride Photonics for the Near-Infrared

• Published in: IEEE journal of selected topics in quantum electronics Vol. 26; no. 2; pp. 1 - 13
• Main Authors: Bucio, Thalia Dominguez, Lacava, Cosimo, Clementi, Marco, Faneca, Joaquin, Skandalos, Ilias, Baldycheva, Anna, Galli, Matteo, Debnath, Kapil, Petropoulos, Periklis, Gardes, Frederic
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-03-2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Crystal structure; demultiplexing; Multiplexing; Nonlinear optics; nonlinear photonics; Optical device fabrication; Optical refraction; Optical variables control; Optical waveguides; Phase change materials; Photonic crystals; Silicon; Silicon compounds; Silicon nitride; Silicon photonics
• ISSN: 1077-260X; 1558-4542
• DOI: 10.1109/JSTQE.2019.2934127

In recent years, silicon nitride (SiN) has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 <inline-formula><tex-math notation="LaTeX">{^\circ}</tex-math></inline-formula>C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m wavelength range.