Investigation of MOSFET operation in bipolar mode

Investigation of MOSFET operation in bipolar mode

The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si–SiO 2 interface. The new device characteristics are found promising for use in low-voltage low-power...

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Bibliographic Details
Published in:Microelectronics and reliability Vol. 39; no. 1; pp. 133 - 137
Main Authors: Pershenkov, V.S., Belyakov, V.V., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Abramov, V.V.
Format: Journal Article
Language:English
Published: Elsevier Ltd 1999
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Summary:The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si–SiO 2 interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(98)00157-7