Picosecond Optically Induced Anisotropic State Filling in Semiconductors

Picosecond Optically Induced Anisotropic State Filling in Semiconductors

Picosecond self-diffraction is observed from transient orientational gratings produced in germanium by an anisotropic (in k space) filling of the optically coupled states by direct absorption of the nearly monochromatic polarized exciting radiation, the first direct observation of anisotropic state...

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Bibliographic Details
Published in:Physical review letters Vol. 49; no. 13; pp. 933 - 936
Main Authors: Smirl, A L, Boggess, T F, Wherrett, B S, Perryman, G P, Miller, A
Format: Journal Article
Language:English
Published: 01-01-1982
Online Access:Get full text
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Summary:Picosecond self-diffraction is observed from transient orientational gratings produced in germanium by an anisotropic (in k space) filling of the optically coupled states by direct absorption of the nearly monochromatic polarized exciting radiation, the first direct observation of anisotropic state filling in semiconductors. A new theoretical model is presented briefly; agreement is found with all aspects of the experiment.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0031-9007
DOI:10.1103/PhysRevLett.49.933