Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency

The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber configuration and construction, incoherent light source, and pyrometers used for temperature measurement. M...

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Published in:	IEEE transactions on semiconductor manufacturing Vol. 5; no. 4; pp. 347 - 358
Main Authors:	Deaton, R., Massoud, H.Z.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-11-1992 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Cooling Electronics Exact sciences and technology Lamps Light sources Manufacturing Microelectronic fabrication (materials and surfaces technology) Oxidation Rapid thermal processing Residual stresses Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature measurement Thermal stresses Microelectronic fabrication Heat treatment Statistical analysis Integrated circuit Oxidation Silicon Experimental study
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Abstract	The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber configuration and construction, incoherent light source, and pyrometers used for temperature measurement. Mechanisms for oxide growth and oxide thickness variation in rapid-thermal oxidation are discussed. Thermally induced stress, lamp configuration, and convective cooling affected the oxide thickness variation within a wafer. Wafer-to-wafer oxide thickness variation depended on the material of chamber construction, quartz or metal, and was related to residual heating for longer oxidations. For the same processing conditions, the oxide thickness was different for different systems, due to temperature error and a photonic component to rapid-thermal oxidation. Analysis of empirical oxide thickness models revealed a silicon orientation effect and a mechanism related to oxidant transport that was common to rapid-thermal oxidation in different systems.< >
AbstractList	The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber configuration and construction, incoherent light source, and pyrometers used for temperature measurement. Mechanisms for oxide growth and oxide thickness variation in rapid-thermal oxidation are discussed. Thermally induced stress, lamp configuration, and convective cooling affected the oxide thickness variation within a wafer. Wafer-to-wafer oxide thickness variation depended on the material of chamber construction, quartz or metal, and was related to residual heating for longer oxidations. For the same processing conditions, the oxide thickness was different for different systems, due to temperature error and a photonic component to rapid-thermal oxidation. Analysis of empirical oxide thickness models revealed a silicon orientation effect and a mechanism related to oxidant transport that was common to rapid-thermal oxidation in different systems The dependence of oxide thickness, and oxide thickness variation within a wafer and wafer-to-wafer on process variables was studied in rapid-thermal processing systems that differed in chamber configuration and construction, incoherent light source, and pyrometers used for temperature measurement. Mechanisms for oxide growth and oxide thickness variation in rapid-thermal oxidation are discussed. Thermally induced stress, lamp configuration, and convective cooling affected the oxide thickness variation within a wafer. Wafer-to-wafer oxide thickness variation depended on the material of chamber construction, quartz or metal, and was related to residual heating for longer oxidations. For the same processing conditions, the oxide thickness was different for different systems, due to temperature error and a photonic component to rapid-thermal oxidation. Analysis of empirical oxide thickness models revealed a silicon orientation effect and a mechanism related to oxidant transport that was common to rapid-thermal oxidation in different systems.< >
Author	Deaton, R. Massoud, H.Z.
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Cites_doi	10.1149/1.2108408 10.1149/1.2097544 10.1103/PhysRevLett.60.600 10.1557/PROC-92-109 10.1557/PROC-92-147 10.1063/1.100656 10.1063/1.98126 10.1149/1.2119739 10.1103/PhysRevLett.59.213 10.1557/PROC-52-327 10.1063/1.333832 10.1063/1.339526 10.1063/1.349282 10.1007/BF00615929 10.1149/1.2113648 10.1063/1.96278 10.1149/1.2129722 10.1049/el:19860475 10.1557/PROC-52-313 10.1557/PROC-52-321 10.1149/1.2133396 10.1063/1.333924 10.1016/0040-6090(84)90046-4 10.1149/1.2108647 10.1063/1.349254 10.1116/1.584902 10.1109/EDL.1985.26099 10.1149/1.2128968 10.1063/1.340176 10.1063/1.337040 10.1149/1.2401753 10.1016/0168-583X(87)90925-6 10.1063/1.89372 10.1149/1.2404406 10.1149/1.2100881 10.1557/PROC-146-333 10.1116/1.571669 10.1063/1.92526 10.1149/1.2108829 10.1149/1.2129899 10.1063/1.90409
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Keywords	Microelectronic fabrication Heat treatment Statistical analysis Integrated circuit Oxidation Silicon Experimental study
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SubjectTerms	Applied sciences Cooling Electronics Exact sciences and technology Lamps Light sources Manufacturing Microelectronic fabrication (materials and surfaces technology) Oxidation Rapid thermal processing Residual stresses Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Temperature measurement Thermal stresses
Title	Manufacturability of rapid-thermal oxidation of silicon: oxide thickness, oxide thickness variation, and system dependency
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