Development of buffer layers for high quality Tl-Pb-Sr-Ba-Ca-Cu-O thick films on flexible metal substrates

• Published in: IEEE transactions on applied superconductivity Vol. 7; no. 2; pp. 1969 - 1972
• Main Authors: Parilla, P.A., McGraw, J.M., Schulz, D.L., Wendelin, J., Bhattacharya, R.N., Blaugher, R.D., Ginley, D.S., Voigt, J.A., Roth, E.P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-06-1997; Institute of Electrical and Electronics Engineers
• Subjects: Buffer layers; Chemicals; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Epitaxial growth; Exact sciences and technology; High-tc films; Laser deposition; Lattices; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical materials; Physics; Pulsed laser deposition; Stability; Strontium; Substrates; Superconducting films; Superconducting films and low-dimensional structures; Superconductivity; Buffer layer; Lanthanum oxides; Annealing; Inorganic compounds; Transition element compounds; Lead oxides; Experimental study; Calcium oxides; Strontium oxides; Thallium oxides; Multi-element compounds; Thick film; High-Tc superconductors; Laser ablation technique; Copper oxides; Cerium oxides; Aluminium oxides
• ISSN: 1051-8223; 1558-2515
• DOI: 10.1109/77.620973

Previous work has demonstrated the ability to grow extremely high quality Tl/sub 0.5/Pb/sub 0.5/Sr/sub 1.6/Ba/sub 0.4/Ca/sub 2/Cu/sub 3/O/sub x/ epitaxial films up to 15 /spl mu/m thick using melt growth techniques on single crystal LaAlO/sub 3/ substrates. This melt growth process is an ideal candidate for producing high quality superconducting films on flexible metal substrates with textured buffer layers; however, the textured buffer layer of choice, cubic yttria stabilized zirconia (YSZ), appears to be incompatible with the melt growth of TI-Pb-Sr-Ba-Ca-Cu-O films. In this work, we investigate textured buffer layers which are compatible with the epitaxial growth of Tl/sub 0.5/Pb/sub 0.5/Sr/sub 1.6/Ba/sub 0.4/Ca/sub 2/Cu/sub 3/O/sub x/ films. Crucial properties for the successful development of a suitable buffer layer are lattice matching, chemical stability and texture. Buffer layer materials investigated are CeO/sub 2/ and LaAlO/sub 3/ grown using a UV (248 nm) pulsed excimer laser deposition system equipped with multiple targets and a controlled ambient. Influence of substrate temperature and ambient gas pressure and flow on buffer growth are analyzed via XRD characterization. Highly textured buffer layers have been fabricated.