Soft X-ray emission study of thermally treated Ni(film)/4H–SiC(substrate) interface

• Published in: Applied surface science Vol. 190; no. 1; pp. 366 - 370
• Main Authors: Ohi, A., Labis, J., Morikawa, Y., Fujiki, T., Hirai, M., Kusaka, M., Iwami, M.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 08-05-2002; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Diffusion; interface formation; Exact sciences and technology; Interfacial reaction; Physics; Silicon carbide; Soft X-ray emission; Solid surfaces and solid-solid interfaces; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Synchrotron radiation; Silicon carbide; Interfacial reaction; Soft X-ray emission; Synchrotron radiation; Interfacial layer; Annealing; Soft X radiation; Silicon carbides; Nickel; Solid-solid interfaces; Interface reaction; X-ray emission spectra
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00860-1

Deposition of Ni as contact on 4H–SiC has been investigated. Ni/4H–SiC samples were annealed at temperatures of 600, 800 and 950
°C for 30
min and were non-destructively characterized by soft X-ray emission spectroscopy (SXES) using synchrotron radiation as excitation. Si L
2,3 SXE showed the formation of Ni
2Si for all annealing temperatures. The C K SXE indicated the formation of graphite and graphitic carbons at annealing temperatures of 950
°C and below 800
°C, respectively.