Comparative study of Sb2S3, Bi2S3 and In2S3 thin film deposition on TiO2 by successive ionic layer adsorption and reaction (SILAR) method
Sensitization of nanoporous TiO2 with Sb2S3, Bi2S3, and In2S3 thin films deposited at the room temperature by using the simple and inexpensive SILAR method is presented. Structural, morphological, and optical characterization of thin films prepared by this method were conducted by X-ray diffraction...
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| Published in: | Materials science in semiconductor processing Vol. 37; pp. 235 - 240 |
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| Abstract | Sensitization of nanoporous TiO2 with Sb2S3, Bi2S3, and In2S3 thin films deposited at the room temperature by using the simple and inexpensive SILAR method is presented. Structural, morphological, and optical characterization of thin films prepared by this method were conducted by X-ray diffraction (XRD), scanning electron microscopy (SEM), and diffuse reflectance spectroscopy (DRS). The photocurrent response of the thin films was studied with a three electrode photoelectrochemical cell. The influence of the number of deposition cycles on the optical properties of the thin films was investigated, and the structural and morphological studies revealed the formation of polycrystalline thin films with an orthorhombic structure for Sb2S3 and Bi2S3 system, whereas a cubic structure was found for the In2S3, which had a cluster-like surface morphology and uniform distribution. Optical studies showed that enhancing TiO2 light absorption in the visible range is possible by the incorporation of antimony, bismuth, and indium sulfides. Photocurrent measurements showed that photons are absorbed by metal sulfide and electrons injected to TiO2. |
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| AbstractList | Sensitization of nanoporous TiO2 with Sb2S3, Bi2S3, and In2S3 thin films deposited at the room temperature by using the simple and inexpensive SILAR method is presented. Structural, morphological, and optical characterization of thin films prepared by this method were conducted by X-ray diffraction (XRD), scanning electron microscopy (SEM), and diffuse reflectance spectroscopy (DRS). The photocurrent response of the thin films was studied with a three electrode photoelectrochemical cell. The influence of the number of deposition cycles on the optical properties of the thin films was investigated, and the structural and morphological studies revealed the formation of polycrystalline thin films with an orthorhombic structure for Sb2S3 and Bi2S3 system, whereas a cubic structure was found for the In2S3, which had a cluster-like surface morphology and uniform distribution. Optical studies showed that enhancing TiO2 light absorption in the visible range is possible by the incorporation of antimony, bismuth, and indium sulfides. Photocurrent measurements showed that photons are absorbed by metal sulfide and electrons injected to TiO2. |
| Author | Huerta-Flores, Ali M. de la Parra, Salomé M. García-Gómez, Nora A. Sánchez, Eduardo M. |
| Author_xml | – sequence: 1 givenname: Ali M. surname: Huerta-Flores fullname: Huerta-Flores, Ali M. email: alimargot86@gmail.com – sequence: 2 givenname: Nora A. surname: García-Gómez fullname: García-Gómez, Nora A. email: noraaleyda@gmail.com – sequence: 3 givenname: Salomé M. surname: de la Parra fullname: de la Parra, Salomé M. email: smdlp@yahoo.com – sequence: 4 givenname: Eduardo M. surname: Sánchez fullname: Sánchez, Eduardo M. email: eduardo.sanchezcv@uanl.edu.mx |
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| Cites_doi | 10.1021/ja070099a 10.1134/S1063782613070233 10.1039/b700885f 10.1038/nature11476 10.1016/S0040-6090(99)00362-4 10.1007/s11082-013-9786-x 10.1088/0022-3727/34/1/303 10.1002/adfm.200902234 10.1021/jz2000112 10.1007/BF02708491 10.1016/S0921-5107(99)00174-9 10.1246/cl.2007.88 10.1016/S1452-3981(23)17060-X 10.1021/jp046781y 10.1016/S1452-3981(23)14408-7 10.1021/jp064817b 10.1016/j.mssp.2014.01.029 10.1021/jp060390x 10.1002/1521-396X(200010)181:2<427::AID-PSSA427>3.0.CO;2-P 10.1016/S0254-0584(99)00259-X 10.1021/jp030334l 10.1016/j.matchemphys.2008.01.043 10.1039/C3TA15444K 10.1023/A:1006613510968 10.1080/08827510310001648899 10.1039/c3ra23055d 10.2174/1874183500902010023 |
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| References | Graetzel, Janssen, Mitzi, Sargent (bib1) 2012; 488 Blackburn, Selmarten, Ellingson, Jones, Micic, Nozik (bib5) 2005; 109 Lajnef, Ezzaouia (bib18) 2009; 2 Neale, Frank (bib14) 2007; 17 Wang, Wang, Ma, Li, Qiu (bib7) 2006; 110 Lin, Nattestad, Yu, Bai, Wang, Dou, Kim (bib16) 2014; 2 Peter, Wijayantha, Riley, Waggett (bib12) 2003; 107 N. Amin, M.I. Hossain, N.R. Hamzah, P. Chelvanathan Physical and optical properties of In2S3 thin films deposited by thermal evaporation technique for CIGS solar cells, in: Proceedings of the First Conference on Clean Energy and Technology CET, (2011), pp. 63–7. Balasubramanian, Suriyanarayanan, Prabahar (bib27) 2012; 3 Sall, Raidou, Elfarrass, Hartiti, Mari, Qachaou, Fahoume (bib21) 2014; 46 Salem, Soliman Selim, Salem (bib22) 2001; 34 Killedar, Katore, Bhosale (bib30) 2000; 64 Mane, Sankapal, Lokhande (bib25) 1999; 353 Benramdane, Latreche, Tabet, Boukhalfa, Kebbab, Bouzidi (bib28) 1999; 64 Pathan, Lokhande (bib13) 2004; 27 Sankapal, Mane, Lokhande (bib26) 1999; 18 Marí, Mollar, Soro, Henríquez, Schrebler, Gómez (bib19) 2013; 8 Bang, Kamat. (bib2) 2010; 20 Ubale, Daryapurkar, Mankar, Raut, Sangawar, Bhosale (bib32) 2008; 110 Tachibana, Akiyama, Ohtsuka, Torimoto, Kuwabata (bib3) 2007; 36 Tigau (bib23) 2008; 53 Robel, Kuno, Kamat (bib4) 2007; 129 Bhira, Essaidi, Belgacem, Couturier, Salardenne, Barreau, Bernede (bib10) 2000; 181 Mane, Desai, Joo, Han (bib29) 2007; 2 M. Vorozhtsova, J. Drbohlavova J. Hubalek, Chemical Microsensors with ordered nanostructures, Brno University of Technology, Faculty of Electrical Engineering and communication Laboratory of Microsensors and Nanotechnologies (LabSensNano), Intechopen. Yu, Zhu, Norman, Ferrere, Frank, Nozik (bib6) 2006; 110 Reeja-Jayan, Manthiram (bib9) 2013; 3 Tigau, Rusu, Gheorghies (bib11) 2002; 4 Bouabid, Ihlal, Outzourhit, Ameziane (bib17) 2004; 27 Hussain, Begum, Rahman (bib31) 2014; 21 Braga, Giménez, Concina, Vomiero, Seró (bib8) 2011; 2 Virt, Rudyj, Kurilo, Ye., Lopatynskyi, Linnik, Tetyorkin, Potera (bib24) 2013; 47 Robel (10.1016/j.mssp.2015.03.044_bib4) 2007; 129 Lin (10.1016/j.mssp.2015.03.044_bib16) 2014; 2 Reeja-Jayan (10.1016/j.mssp.2015.03.044_bib9) 2013; 3 Hussain (10.1016/j.mssp.2015.03.044_bib31) 2014; 21 Neale (10.1016/j.mssp.2015.03.044_bib14) 2007; 17 Lajnef (10.1016/j.mssp.2015.03.044_bib18) 2009; 2 Tigau (10.1016/j.mssp.2015.03.044_bib11) 2002; 4 Sall (10.1016/j.mssp.2015.03.044_bib21) 2014; 46 Balasubramanian (10.1016/j.mssp.2015.03.044_bib27) 2012; 3 Bhira (10.1016/j.mssp.2015.03.044_bib10) 2000; 181 Blackburn (10.1016/j.mssp.2015.03.044_bib5) 2005; 109 10.1016/j.mssp.2015.03.044_bib20 Ubale (10.1016/j.mssp.2015.03.044_bib32) 2008; 110 Braga (10.1016/j.mssp.2015.03.044_bib8) 2011; 2 Salem (10.1016/j.mssp.2015.03.044_bib22) 2001; 34 Benramdane (10.1016/j.mssp.2015.03.044_bib28) 1999; 64 Yu (10.1016/j.mssp.2015.03.044_bib6) 2006; 110 Virt (10.1016/j.mssp.2015.03.044_bib24) 2013; 47 Bang (10.1016/j.mssp.2015.03.044_bib2) 2010; 20 Peter (10.1016/j.mssp.2015.03.044_bib12) 2003; 107 Tigau (10.1016/j.mssp.2015.03.044_bib23) 2008; 53 Marí (10.1016/j.mssp.2015.03.044_bib19) 2013; 8 Sankapal (10.1016/j.mssp.2015.03.044_bib26) 1999; 18 Tachibana (10.1016/j.mssp.2015.03.044_bib3) 2007; 36 Mane (10.1016/j.mssp.2015.03.044_bib25) 1999; 353 10.1016/j.mssp.2015.03.044_bib15 Wang (10.1016/j.mssp.2015.03.044_bib7) 2006; 110 Graetzel (10.1016/j.mssp.2015.03.044_bib1) 2012; 488 Mane (10.1016/j.mssp.2015.03.044_bib29) 2007; 2 Pathan (10.1016/j.mssp.2015.03.044_bib13) 2004; 27 Bouabid (10.1016/j.mssp.2015.03.044_bib17) 2004; 27 Killedar (10.1016/j.mssp.2015.03.044_bib30) 2000; 64 |
| References_xml | – volume: 181 start-page: 427 year: 2000 ident: bib10 publication-title: Phys. Status Solidi A contributor: fullname: Bernede – volume: 17 start-page: 3216 year: 2007 end-page: 3221 ident: bib14 publication-title: J. Mater. Chem. contributor: fullname: Frank – volume: 2 start-page: 141 year: 2007 end-page: 148 ident: bib29 publication-title: Int. J. Electrochem. Sci. contributor: fullname: Han – volume: 4 start-page: 943 year: 2002 end-page: 948 ident: bib11 publication-title: J. Opt. Adv. Mater. contributor: fullname: Gheorghies – volume: 20 start-page: 1970 year: 2010 end-page: 1976 ident: bib2 publication-title: Adv. Funct. Mater. contributor: fullname: Kamat. – volume: 8 start-page: 3510 year: 2013 end-page: 3523 ident: bib19 publication-title: Int. J. Electrochem. Sci. contributor: fullname: Gómez – volume: 353 start-page: 29 year: 1999 end-page: 32 ident: bib25 publication-title: Thin. Solid Films contributor: fullname: Lokhande – volume: 34 start-page: 12 year: 2001 end-page: 17 ident: bib22 publication-title: J. Phys. D: Appl. Phys. contributor: fullname: Salem – volume: 18 start-page: 1453 year: 1999 end-page: 1455 ident: bib26 publication-title: J. Mater. Sci. Lett. contributor: fullname: Lokhande – volume: 47 start-page: 1003 year: 2013 end-page: 1007 ident: bib24 publication-title: Semiconductors. contributor: fullname: Potera – volume: 46 start-page: 247 year: 2014 end-page: 257 ident: bib21 publication-title: Opt. Quant. Electron. contributor: fullname: Fahoume – volume: 64 start-page: 84 year: 1999 end-page: 87 ident: bib28 publication-title: Mat. Sci. Eng. B contributor: fullname: Bouzidi – volume: 21 start-page: 74 year: 2014 end-page: 81 ident: bib31 publication-title: Mat. Sci. Semicon. Proc. contributor: fullname: Rahman – volume: 36 start-page: 88 year: 2007 end-page: 89 ident: bib3 publication-title: Chem. Lett. contributor: fullname: Kuwabata – volume: 129 start-page: 4136 year: 2007 end-page: 4137 ident: bib4 publication-title: J. Am. Chem. Soc. contributor: fullname: Kamat – volume: 488 start-page: 304 year: 2012 end-page: 312 ident: bib1 publication-title: Nature contributor: fullname: Sargent – volume: 110 start-page: 180 year: 2008 end-page: 510 ident: bib32 publication-title: Mater. Chem. Phys. contributor: fullname: Bhosale – volume: 110 start-page: 25451 year: 2006 end-page: 25454 ident: bib6 publication-title: J. Phys. Chem. B contributor: fullname: Nozik – volume: 2 start-page: 8902 year: 2014 end-page: 8909 ident: bib16 publication-title: J. Mater. Chem. A contributor: fullname: Kim – volume: 107 start-page: 8378 year: 2003 end-page: 8381 ident: bib12 publication-title: J. Phys. Chem. B contributor: fullname: Waggett – volume: 27 start-page: 207 year: 2004 end-page: 214 ident: bib17 publication-title: Act. Passiv. Electron. Compon. contributor: fullname: Ameziane – volume: 3 start-page: 5412 year: 2013 end-page: 5421 ident: bib9 publication-title: RSC. Adv. contributor: fullname: Manthiram – volume: 3 start-page: 2369 year: 2012 end-page: 2373 ident: bib27 publication-title: Adv.Appl. Sci. Res. contributor: fullname: Prabahar – volume: 64 start-page: 166 year: 2000 end-page: 169 ident: bib30 publication-title: Mater. Chem. Phys. contributor: fullname: Bhosale – volume: 27 start-page: 85 year: 2004 end-page: 111 ident: bib13 publication-title: Bull. Mater. Sci. J. contributor: fullname: Lokhande – volume: 109 start-page: 2625 year: 2005 end-page: 2631 ident: bib5 publication-title: J. Phys. Chem. B contributor: fullname: Nozik – volume: 2 start-page: 454 year: 2011 end-page: 460 ident: bib8 publication-title: Phys. Chem. Lett. contributor: fullname: Seró – volume: 2 start-page: 23 year: 2009 end-page: 26 ident: bib18 publication-title: Open Appl. Phys. J. contributor: fullname: Ezzaouia – volume: 53 start-page: 209 year: 2008 end-page: 215 ident: bib23 publication-title: Rom. J. Phys. contributor: fullname: Tigau – volume: 110 start-page: 14406 year: 2006 end-page: 14409 ident: bib7 publication-title: J. Phys. Chem. B contributor: fullname: Qiu – volume: 129 start-page: 4136 year: 2007 ident: 10.1016/j.mssp.2015.03.044_bib4 publication-title: J. Am. Chem. Soc. doi: 10.1021/ja070099a contributor: fullname: Robel – volume: 47 start-page: 1003 year: 2013 ident: 10.1016/j.mssp.2015.03.044_bib24 publication-title: Semiconductors. doi: 10.1134/S1063782613070233 contributor: fullname: Virt – volume: 17 start-page: 3216 year: 2007 ident: 10.1016/j.mssp.2015.03.044_bib14 publication-title: J. Mater. Chem. doi: 10.1039/b700885f contributor: fullname: Neale – volume: 3 start-page: 2369 year: 2012 ident: 10.1016/j.mssp.2015.03.044_bib27 publication-title: Adv.Appl. Sci. Res. contributor: fullname: Balasubramanian – volume: 488 start-page: 304 year: 2012 ident: 10.1016/j.mssp.2015.03.044_bib1 publication-title: Nature doi: 10.1038/nature11476 contributor: fullname: Graetzel – volume: 353 start-page: 29 year: 1999 ident: 10.1016/j.mssp.2015.03.044_bib25 publication-title: Thin. Solid Films doi: 10.1016/S0040-6090(99)00362-4 contributor: fullname: Mane – volume: 46 start-page: 247 year: 2014 ident: 10.1016/j.mssp.2015.03.044_bib21 publication-title: Opt. Quant. Electron. doi: 10.1007/s11082-013-9786-x contributor: fullname: Sall – volume: 34 start-page: 12 year: 2001 ident: 10.1016/j.mssp.2015.03.044_bib22 publication-title: J. Phys. D: Appl. Phys. doi: 10.1088/0022-3727/34/1/303 contributor: fullname: Salem – volume: 20 start-page: 1970 year: 2010 ident: 10.1016/j.mssp.2015.03.044_bib2 publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.200902234 contributor: fullname: Bang – volume: 2 start-page: 454 year: 2011 ident: 10.1016/j.mssp.2015.03.044_bib8 publication-title: Phys. Chem. Lett. doi: 10.1021/jz2000112 contributor: fullname: Braga – volume: 27 start-page: 85 year: 2004 ident: 10.1016/j.mssp.2015.03.044_bib13 publication-title: Bull. Mater. Sci. J. doi: 10.1007/BF02708491 contributor: fullname: Pathan – volume: 64 start-page: 84 year: 1999 ident: 10.1016/j.mssp.2015.03.044_bib28 publication-title: Mat. Sci. Eng. B doi: 10.1016/S0921-5107(99)00174-9 contributor: fullname: Benramdane – volume: 36 start-page: 88 year: 2007 ident: 10.1016/j.mssp.2015.03.044_bib3 publication-title: Chem. Lett. doi: 10.1246/cl.2007.88 contributor: fullname: Tachibana – volume: 53 start-page: 209 year: 2008 ident: 10.1016/j.mssp.2015.03.044_bib23 publication-title: Rom. J. Phys. contributor: fullname: Tigau – volume: 2 start-page: 141 year: 2007 ident: 10.1016/j.mssp.2015.03.044_bib29 publication-title: Int. J. Electrochem. Sci. doi: 10.1016/S1452-3981(23)17060-X contributor: fullname: Mane – volume: 109 start-page: 2625 year: 2005 ident: 10.1016/j.mssp.2015.03.044_bib5 publication-title: J. Phys. Chem. B doi: 10.1021/jp046781y contributor: fullname: Blackburn – volume: 8 start-page: 3510 year: 2013 ident: 10.1016/j.mssp.2015.03.044_bib19 publication-title: Int. J. Electrochem. Sci. doi: 10.1016/S1452-3981(23)14408-7 contributor: fullname: Marí – volume: 110 start-page: 25451 year: 2006 ident: 10.1016/j.mssp.2015.03.044_bib6 publication-title: J. Phys. Chem. B doi: 10.1021/jp064817b contributor: fullname: Yu – volume: 21 start-page: 74 year: 2014 ident: 10.1016/j.mssp.2015.03.044_bib31 publication-title: Mat. Sci. Semicon. Proc. doi: 10.1016/j.mssp.2014.01.029 contributor: fullname: Hussain – ident: 10.1016/j.mssp.2015.03.044_bib20 – volume: 110 start-page: 14406 year: 2006 ident: 10.1016/j.mssp.2015.03.044_bib7 publication-title: J. Phys. Chem. B doi: 10.1021/jp060390x contributor: fullname: Wang – volume: 181 start-page: 427 year: 2000 ident: 10.1016/j.mssp.2015.03.044_bib10 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396X(200010)181:2<427::AID-PSSA427>3.0.CO;2-P contributor: fullname: Bhira – volume: 64 start-page: 166 year: 2000 ident: 10.1016/j.mssp.2015.03.044_bib30 publication-title: Mater. Chem. Phys. doi: 10.1016/S0254-0584(99)00259-X contributor: fullname: Killedar – volume: 107 start-page: 8378 year: 2003 ident: 10.1016/j.mssp.2015.03.044_bib12 publication-title: J. Phys. Chem. B doi: 10.1021/jp030334l contributor: fullname: Peter – volume: 110 start-page: 180 year: 2008 ident: 10.1016/j.mssp.2015.03.044_bib32 publication-title: Mater. Chem. Phys. doi: 10.1016/j.matchemphys.2008.01.043 contributor: fullname: Ubale – volume: 2 start-page: 8902 year: 2014 ident: 10.1016/j.mssp.2015.03.044_bib16 publication-title: J. Mater. Chem. A doi: 10.1039/C3TA15444K contributor: fullname: Lin – volume: 18 start-page: 1453 year: 1999 ident: 10.1016/j.mssp.2015.03.044_bib26 publication-title: J. Mater. Sci. Lett. doi: 10.1023/A:1006613510968 contributor: fullname: Sankapal – volume: 4 start-page: 943 year: 2002 ident: 10.1016/j.mssp.2015.03.044_bib11 publication-title: J. Opt. Adv. Mater. contributor: fullname: Tigau – volume: 27 start-page: 207 year: 2004 ident: 10.1016/j.mssp.2015.03.044_bib17 publication-title: Act. Passiv. Electron. Compon. doi: 10.1080/08827510310001648899 contributor: fullname: Bouabid – volume: 3 start-page: 5412 year: 2013 ident: 10.1016/j.mssp.2015.03.044_bib9 publication-title: RSC. Adv. doi: 10.1039/c3ra23055d contributor: fullname: Reeja-Jayan – volume: 2 start-page: 23 year: 2009 ident: 10.1016/j.mssp.2015.03.044_bib18 publication-title: Open Appl. Phys. J. doi: 10.2174/1874183500902010023 contributor: fullname: Lajnef – ident: 10.1016/j.mssp.2015.03.044_bib15 |
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| Title | Comparative study of Sb2S3, Bi2S3 and In2S3 thin film deposition on TiO2 by successive ionic layer adsorption and reaction (SILAR) method |
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