Influence of the silicon nitride oxidation on the performances of NCLAD isolation

• Published in: Microelectronics and reliability Vol. 38; no. 5; pp. 795 - 805
• Main Authors: Tixier, A., Senez, V., Baccus, B., Marmiroli, A., Colpani, P., Rebora, A., Carnevale, G.P.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01-05-1998; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermal characteristic; Binary compound; Microelectronic fabrication; Simulation; Silicon Nitrides; Two dimensional model; Oxidation; LOCOS technology; Layer thickness
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/S0026-2714(98)00005-5

In order to study NCLAD isolation structures, a silicon nitride oxidation model has been studied and implemented in the process simulation program IMPACT-4. Comparing the models proposed by Kamins, Enomoto and Deal and Grove (DG), it appears that the DG model is the best trade-off between accuracy and easiness of implementation. The calibration against one-dimensional experimental data has been performed and reveals an excellent agreement. The use of this new modeling capability shows that the oxidation of silicon nitride cannot be neglected when optimizing a NCLAD structure. As a result, it has been possible to improve the topography of the oxidation stack of a recessed NCLAD structure in order to obtain the minimum bird's-beak punchthrough
[1, 2].