Optical and structural properties of ZnSe/GaAs interfaces

• Published in: Applied surface science Vol. 112; pp. 165 - 170
• Main Authors: Garcı́a-Rocha, M, López-Luna, E, de Melo, O, Hernández-Calderón, I, Sitter, H, Andreev, A.Yu
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-03-1997; Elsevier Science
• Subjects: Auger; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Critical thickness; Electrical properties of specific thin films; Electrical properties of specific thin films and layer structures (multilayers, superlattices, quantum wells, wires, and dots); Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Photoconduction and photovoltaic effects; Photoconduction and photovoltaic effects; photodielectric effects; Photoconductivity; Physics; Solid surfaces and solid-solid interfaces; Structural properties; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); X-ray diffraction; ZnSe; ZnSe/GaAs heterostructures; 73.40; 73.50.P; Critical thickness; X-ray diffraction; ZnSe/GaAs heterostructures; 73.61.G; Auger; ZnSe; Photoconductivity; Structural properties; 82.80.P; Gallium arsenides; Inorganic compounds; Semiconductor materials; Binary compounds; Zinc selenides; Solid-solid interfaces; XRD; Experimental study; Auger transition; AES
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(96)00981-6

The results of high resolution X-ray diffraction clearly show that the strain in the ZnSe films is inhomogeneous and depends only on the film thickness and not on the growth temperature in the range of 285–325°C; a value of ∼0.17
μm is inferred for the critical thickness of ZnSe on GaAs. The measurements of the spectral response of the heterostructures give a strong photocurrent due to the absorption edges of both GaAs and ZnSe. However, in the case of the GaAs signal a shift towards lower energies is observed with the increase of substrate temperature, indicating local differences in the structure of the interfacial region. The analysis of the intensities of the LMM Auger transitions of Zn and Se indicates the formation of an interfacial layer with excess of Se, suggesting the formation of a pseudomorphic Ga
2Se
3 compound mixed with ZnSe at the interfacial region.