High quality GaN grown by MOVPE

• Published in: Journal of crystal growth Vol. 170; no. 1-4; pp. 316 - 320
• Main Authors: Beaumont, B., Vaille, M., Boufaden, T., el Jani, B., Gibart, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-01-1997; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Vapor phase epitaxy; growth from vapor phase; Inorganic compounds; Semiconductor materials; Gallium nitrides; Laser radiation; Process control; MOVPE method; Reflectometry; Binary compounds; Crystal growth from vapors; PECVD; Experimental study; Precursor
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00635-5

Several nitrogen precursors have been used for the growth of GaN in MOVPE, but so far the best results were obtained using NH3, even though NH3 does not produce a significant amount of active species at the growing interface. To produce active species from N2 or NH3, a remote plasma-enhanced chemical vapour deposition (RPECVD) process has been implemented. In addition, nitrogen metalorganic precursors, triethylamine and t-butylamine, were also used. To accurately control the critical parameters of the MOVPE of GaN, we have implemented a laser reflectometry equipment, which allows a real-time in situ monitoring of the different steps of the growth, i.e. nitridation of the substrate, nucleation, heat treatment, and deposition. Using an appropriate buffer layer, GaN grown on sapphire using NH3 as nitrogen precursor, shows sharp low temperature photoluminescence lines (4 meV at 9 K), whereas other nitrogen precursors did not lead to comparable electronic quality.