Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct...

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Bibliographic Details
Published in:Applied physics letters Vol. 76; no. 14; pp. 1804 - 1806
Main Authors: Nakada, N., Nakaji, M., Ishikawa, H., Egawa, T., Umeno, M., Jimbo, T.
Format: Journal Article
Language:English
Published: 03-04-2000
Online Access:Get full text
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Summary:An InGaN multiple-quantum-well light-emitting diode (LED) containing a GaN/AlGaN distributed Bragg reflector has been grown on a sapphire substrate by metalorganic chemical vapor deposition. Comparing with the conventional LED, the output power has been improved from 79 to 120 μW under 20 mA direct current biasing condition and the external quantum efficiency has been also improved from 0.16% to 0.23% under 10 mA dc current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.126171