Hydrodynamic device simulation using new state variables tailored for a block Gummel iterative approach

• Published in: Solid State Electronics Vol. 39; no. 8; pp. 1213 - 1220
• Main Authors: Liang, Wenchao, Kerr, D.C., Goldsman, N., Mayergoyz, I.D.
• Format: Book Review Journal Article
• Language: English
• Published: Elsevier Ltd 1996
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(96)00015-9

A new numerical formulation for solving the hydrodynamic model of semiconductor devices which is specially tailored for a block-Gummel iterative approach is presented. Instead of using standard variables
n,
p,
T
e,
T
p, new state variables are introduced. When used in conjunction with the Gummel method, the new variables facilitate transformation of the HD equations into linear forms. To help resolve rapid variations in the state variables, a Scharfetter-Gummel type discretization has been developed. The discretization yields a discrete system with coefficient matrices which are well conditioned. The discrete equations are solved using a fixed-point algorithm and a block-Gummel iterative technique. The new approach is used to model a 0.35 μm two-dimensional LDD MOSFET.