Planar defects and phase transformation in ZnSe nanosaws

ZnSe nanostructures were grown on Si substrates by Au catalyzed vapor phase growth at 725°C. Three different types of ZnSe nanosaws have been observed using transmission electron microscopy (TEM). Detailed structural and microstructural investigation has been carried out using electron diffraction a...

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Bibliographic Details
Published in:	Journal of materials science. Materials in electronics Vol. 17; no. 12; pp. 1065 - 1070
Main Authors:	WANG, Y. Q, PHILIPOSE, U, RUDA, H, KAVANAGH, K. L
Format:	Journal Article
Language:	English
Published:	Norwell, MA Springer 01-12-2006 Springer Nature B.V
Subjects:	Applied sciences Electronics Exact sciences and technology Materials Microstructure Nanocomposites Nanomaterials Nanostructure Phase transformations Silicon substrates Transmission electron microscopy Zinc selenides Phase transformation High resolution Transmission electron microscopy Electron diffraction Stacking fault Zinc selenides Nanostructure Nanosaw Microstructure Planar defect
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Summary:	ZnSe nanostructures were grown on Si substrates by Au catalyzed vapor phase growth at 725°C. Three different types of ZnSe nanosaws have been observed using transmission electron microscopy (TEM). Detailed structural and microstructural investigation has been carried out using electron diffraction and high-resolution TEM (HRTEM). It has been found that stacking faults and phase transformation are important features of the nanosaw formation. The controlled formation of these ZnSe nanosaws could have very important device applications.[PUBLICATION ABSTRACT]
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0957-4522 1573-482X
DOI:	10.1007/s10854-006-9006-6