Theory of high gain transient energy transfer in GaAs and Si

• Published in: IEEE journal of quantum electronics Vol. 26; no. 6; pp. 1058 - 1066
• Main Authors: Valley, G.C., Dubard, J., Smirl, A.L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-1990; Institute of Electrical and Electronics Engineers
• Subjects: Absorption; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Energy exchange; Exact sciences and technology; Gallium arsenide; General theory, scattering mechanisms; Gratings; Laser excitation; Nonlinear optics; Optical pulses; Optical pumping; Optical saturation; Physics; Probes; Gallium Arsenides; Semiconductor materials; Theoretical study; Numerical method; Silicon; Diffusion; Energy transfer; Transients
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.108101

Rate equations for carrier number densities and wave equations for optical fields are solved numerically to investigate transient energy transfer (TET) from a strong pump beam to a weak probe via the free-carrier nonlinearity in GaAs and Si. The calculations of TET include arbitrary ratio of pulse length to diffusion time, pump depletion, free-carrier absorption, and two-photon absorption. The calculations provide guidance on the optimal choice of sample thickness, free-carrier cross section, and two-photon absorption coefficient for obtaining high TET gains in semiconductors.< >