Donor-state-enabling Er-related luminescence in silicon: direct identification and resonant excitation

We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed on Si/Si:Er nanolayers where a single type of Er optical center dominates. We show that the Er emission can be resonantly induced by direct...

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Bibliographic Details
Published in:	Physical review letters Vol. 99; no. 7; p. 077401
Main Authors:	Izeddin, I, Klik, M A J, Vinh, N Q, Bresler, M S, Gregorkiewicz, T
Format:	Journal Article
Language:	English
Published:	United States 17-08-2007
Subjects:	CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ERBIUM EXCITATION EXCITONS FREE ELECTRON LASERS IONIZATION MEV RANGE 100-1000 OPTICAL PUMPING PHOTOLUMINESCENCE SEMICONDUCTOR MATERIALS SILICON SPECTROSCOPY
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Summary:	We conclusively establish a direct link between formation of an Er-related donor gap state and the 1.5 microm emission of Er in Si. The experiment is performed on Si/Si:Er nanolayers where a single type of Er optical center dominates. We show that the Er emission can be resonantly induced by direct pumping into the bound exciton state of the identified donor. Using two-color spectroscopy with a free-electron laser we determine the ionization energy of the donor-state-enabling Er excitation as E(D) approximately 218 meV. We demonstrate quenching of the Er-related emission upon ionization of the donor.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0031-9007 1079-7114
DOI:	10.1103/PhysRevLett.99.077401