Total dose and proton testing of a commercial HgCdTe array

• Published in: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41; no. 6; pp. 1966 - 1973
• Main Authors: Hopkinson, G.R., Baddiley, C.J., Guy, D.R.P., Parsons, J.E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01-12-1994; Institute of Electrical and Electronics Engineers
• Subjects: Annealing; Applied sciences; CADMIUM COMPOUNDS; CADMIUM TELLURIDES; CHALCOGENIDES; Circuits; CMOS process; DATA; Diodes; ELECTROMAGNETIC RADIATION; Electronics; Exact sciences and technology; EXPERIMENTAL DATA; INFORMATION; INFRARED RADIATION; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Instruments; MERCURY COMPOUNDS; MERCURY TELLURIDES; Multiplexing; NUMERICAL DATA; PHOTODIODES; PHYSICAL RADIATION EFFECTS; Protons; RADIATION EFFECTS; RADIATIONS; READOUT SYSTEMS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPACE FLIGHT; TELLURIDES; TELLURIUM COMPOUNDS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems; Temperature; Testing; Testing, measurement, noise and reliability; On board equipment; Ternary alloy; Space remote sensing; Infrared detection; Photodiode; Space flight; Experimental study; Commercial facility; Photodetector; Radiation resistance; Ionizing irradiation; Test; Complementary MOS technology; Proton irradiation; Diode array; Reliability; Radiation damage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.340531

The radiation tolerance of a commercially available 256/spl times/4 HgCdTe array has been measured. The main effects were ionization-induced and produced changes in diode slope resistance and CMOS multiplexer characteristics particularly the onset of parasitic leakage currents after /spl sim/15 krad(Si). However these effects annealed with storage above 20/spl deg/C.< >