Drift mobilities in chlorine doped Cd0.8Zn0.2Te

• Published in: Journal of crystal growth Vol. 159; no. 1-4; pp. 406 - 409
• Main Authors: Suzuki, K., Akita, N., Dairaku, S., Seto, S., Sawada, T., Imai, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-1996; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Ii-vi semiconductors; Low-field transport and mobility; piezoresistance; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Chlorine additions; Annealing; Inorganic compounds; Zinc tellurides; Ternary compounds; Transition element compounds; Photoluminescence; Doped materials; Time-of-flight method; Experimental study; Trapping; II-VI semiconductors; Cadmium tellurides; Drift mobility
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(95)00674-5

The drift mobilities of chlorine doped high resistivity Cd0.8Zn0.2Te have been investigated by using time-of-flight technique. The electron as well as the hole mobility in the as-grown crystals are limited by trap-controlled carrier transport. The energy locations of the defects responsible for carrier trapping are estimated to be EC − 0.03 eV and EV + 0.14 eV for electrons and holes, respectively. After annealing at 400°C for 80 h, no evidence of trap-controlled mobility was recognized for electrons. On the other hand, no significant change before and after annealing was observed for hole transport. These results are explained by the complex defect model composed of Cd vacancy and chlorine donor.