Electron–hole complexes assisted tunneling in the electrostatically connected quantum dots

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 43; no. 8; pp. 1465 - 1469
• Main Authors: Yan, W.X., Li, Y.D., Wei, H.R., Xu, L.P., Wen, T.D.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2011; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; Materials science; Molecular electronics, nanoelectronics; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum dots; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Quantum dots; Quantum tunnel effect; Tunnel effect; Analytical method; Probability distribution; Numerical method; Resonance; Nanostructured materials
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2011.04.007

The quantum tunneling processes in an optically excited single-electron tunneling quantum dot electrostatically coupled to a p-type side quantum dot have been investigated. The physical implications of the resonance mechanisms participating in the tunneling processes have been analyzed in an analytical and numerical methods. Each of the tunneling current peaks has been associated with a particular resonance mechanism by the detailed numerical examination on resonance probability distributions.
The tunneling current peaks are generated by the electron–hole complexes resonance mechanisms, which are determined by the probability distributions and resonance energies simultaneously.
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► The tunneling current through the optically excited SET devices has been solved. ► The tunneling current peaks are dominated by the electron and hole complexes.► The electron and hole complexes can be classified into electron and hole parts respectively.