Methods for fast, reliable growth of Sn whiskers

• Published in: Surface science Vol. 652; pp. 355 - 366
• Main Authors: Bozack, M.J., Snipes, S.K., Flowers, G.N.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-10-2016
• Subjects: AES; Growth; High density; Sputtering; Strategy; Stresses; Tin; Whiskers; Tin; Growth; Sputtering; Whiskers; AES
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2016.01.010

We report several methods to reliably grow dense fields of high-aspect ratio tin whiskers for research purposes in a period of days to weeks. The techniques offer marked improvements over previous means to grow whiskers, which have struggled against the highly variable incubation period of tin whiskers and slow growth rate. Control of the film stress is the key to fast-growing whiskers, owing to the fact that whisker incubation and growth are fundamentally a stress-relief phenomenon. The ability to grow high-density fields of whiskers (103–106/cm2) in a reasonable period of time (days, weeks) has accelerated progress in whisker growth and aided in development of whisker mitigation strategies.
Method for fast, reproducible, high density fields of Sn whiskers rely on film-substrate systems having high %ΔCTE differences and thermal cycling. [Display omitted]
•Methods to reliably grow dense fields of tin whiskers for research are reported.•The techniques offer marked improvements over previous means to grow whiskers.•Control of the film stress is the key to fast-growing whiskers.•Resulting whisker densities are 103–106/cm2 in a (days, weeks) period of time.