Kinetic roughness in epitaxy (experimental)

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 30; no. 2; pp. 137 - 142
• Main Authors: Cotta, M.A., Hamm, R.A., Chu, S.N.G., Hull, R., Harriott, L.R., Temkin, H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-03-1995; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Indium phosphide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Physics; Surface diffusion; Surface roughness; Molecular beam epitaxy; Surface roughness; Surface diffusion; Indium phosphide; Epitaxial layers; Semiconductor materials; Scattering; Epitaxy; Roughness; Experimental study; III-V compound; Surface states; Thin films; Indium phosphides; Growth mechanism; TEM
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/0921-5107(94)09008-4

Different regimes of growth morphology are observed for InP films prepared by metal-organic molecular beam epitaxy. Below a well-defined minimum growth temperature
T
g
min kinetic roughening is observed. From the temperature dependence of roughening near
T
g
min for substrates with different misorientations we estimate a value of 0.4-0.5 eV for the Schwoebel-Erlich step crossing barrier. At growth temperatures higher than
T
g
min we observe the formation of localized surface defects associated with vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters.