Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

• Published in: Journal of the Korean Physical Society Vol. 71; no. 10; pp. 707 - 710
• Main Authors: Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang Heon
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Physical Society 01-11-2017; Springer Nature B.V; 한국물리학회
• Subjects: Breakdown; Chemical vapor deposition; Electric potential; Leakage current; Mathematical and Computational Physics; Oxidation; Particle and Nuclear Physics; Passivity; Physics; Physics and Astronomy; Repair & maintenance; Schottky diodes; Theoretical; 물리학; Breakdown voltage; 4H-SiC; Schottky barrier diode; Passivation
• ISSN: 0374-4884; 1976-8524
• DOI: 10.3938/jkps.71.707

In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1) thermal oxide with a post oxidation annealing, or no oxide by removing the oxide, and (2) plasma-enhanced chemical vapor deposited (PECVD) oxide, phosphosilicate glass (PSG), or polyimide (PI). The results show that the SBD having a sacrificial oxide as 1
st
passivation layer and a PI as 2
nd
passivation layer exhibited lower leakage current by a factor of more than 2 for the reverse bias above 1000 V than the others and its breakdown voltage (VBR) was 2254 V, which corresponds to 93% VBR of a parallel-plane ideal device.