Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates

• Published in: Journal of electronic materials Vol. 31; no. 7; pp. 815 - 821
• Main Authors: VARESI, J. B, BUELL, A. A, BORNFREUND, R. E, RADFORD, W. A, PETERSON, J. M, MARANOWSKI, K. D, JOHNSON, S. M, KINGI, D. F
• Format: Conference Proceeding Journal Article
• Language: English
• Published: New York, NY Institute of Electrical and Electronics Engineers 01-07-2002; Springer Nature B.V
• Subjects: Applied sciences; Automation; Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors; Electronics; Exact sciences and technology; Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Molecular beam epitaxy; Optoelectronic devices; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors; Ternary compound; Performance evaluation; Focal plane arrays; Dry process; Infrared detector; Mid infrared radiation; Photodetector; Near infrared radiation; Microelectronic fabrication; Manufacturing process; Cadmium tellurides; Dark current; Molecular beam epitaxy; Mercury tellurides
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-002-0243-z

We are continuing to develop our growth and processing capabilities for HgCdTe grown on 4-in. Si substrates by molecular beam epitaxy (MBE). Both short-wave and mid-wave infrared (SWIR and MWIR) double-layer hetero-junctions (DLHJs) have been fabricated. In order to improve the producibility of the material, we have implemented an in-situ growth composition-control system. We have explored dry etching the HgCdTe/Si wafers and seen promising results. No induced damage was observed in these samples. Detector results show that the HgCdTe/Si devices are state-of-the-art, following the diffusion-limited trend line established by other HgCdTe technologies. Focal-plane array (FPA) testing has been performed in order to assess the material over large areas. The FPA configurations range from 128×128 to 1,024×1,024, with unit cells as small as 20 µm. The MWIR responsivity and NEDT values are comparable to those of existing InSb FPAs. Pixel operabilities well in excess of 99% have been measured. We have also explored the role of growth macrodefects on diode performance and related their impact to FPA operability. The SWIR HgCdTe/Si shows similar results to the MWIR material. Short-wave IR FPA, median dark-current values of less than 0.1 e^sup -^/sec have been achieved.[PUBLICATION ABSTRACT]