Solution-processible high-permittivity nanocomposite gate insulators for organic field-effect transistors

• Published in: Applied physics letters Vol. 93; no. 1
• Main Authors: Kim, P., Zhang, X.-H., Domercq, B., Jones, S. C., Hotchkiss, P. J., Marder, S. R., Kippelen, B., Perry, J. W.
• Format: Journal Article
• Language: English
• Published: 07-07-2008
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.2949320

We report on solution-processible high permittivity nanocomposite gate insulators based on BaTiO3 nanoparticles, surface-modified with a phosphonic acid, in poly(4-vinylphenol) for organic field-effect transistors. The use of surface-modified BaTiO3 nanoparticles affords high quality nanocomposite thin films at large nanoparticle volume fractions (up to 37vol%) with a large capacitance density and a low leakage current (10−8A∕cm2). The fabricated pentacene field-effect transistors using these nanocomposites show a large on/off current ratio (Ion∕off 104–106) due to the high capacitance density and small leakage current of the gate insulator.