LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures

• Published in: Japanese Journal of Applied Physics Vol. 28; no. 10A; p. L1725
• Main Authors: Mukai, Seiji, Watanabe, Masanobu, Itoh, Hideo, Yajima, Hiroyoshi, Yano, Tomomi, Woo, Jong-Chun
• Format: Journal Article
• Language: English
• Published: 01-10-1989
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.28.L1725

AlGaAs-GaAs single quantum wells with thicknesses
d
down to 6 nm are prepared by LPE at 742°C. The transmission electron microphotographs and the luminescence/photocurrent spectra of these wells indicate that the interface roughness and the transition layer thickness
L
of the wells are about 1.5 nm and 3 nm, respectively. Energy levels of
E
1h
,
E
1l
, and
E
2h
are calculated as a function of
d
and
L
, which allows us to estimate these values from luminescence or photocurrent spectra measured at room temperatures.