Liquid-phase epitaxy of In-doped PbTe for the application of mid-infrared semiconductor laser

Indium-doped PbTe epitaxial layers and pn homojunction diodes were grown on PbTe substrate using the temperature-difference method under controlled vapor pressure (TDM-CVP) liquid-phase epitaxy (LPE). The activation ratio of indium donor in the PbTe epitaxial layer was as high as 80%, and we achieve...

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Bibliographic Details
Published in:	The Journal of physics and chemistry of solids Vol. 69; no. 2; pp. 727 - 729
Main Authors:	Yasuda, Arata, Suto, Ken, Takahashi, Yatsuhiro, Kato, Yoshikazu, Oyama, Yutaka, Nishzawa, Jun-ich
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Oxford Elsevier Ltd 01-02-2008 Elsevier
Subjects:	A. Semiconductors A. Thin films B. Epitaxial growth Condensed matter: electronic structure, electrical, magnetic, and optical properties D. Optical properties Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fundamental areas of phenomenology (including applications) Ii-vi semiconductors Lasers Optics Physics Semiconductor lasers; laser diodes A. Thin films B. Epitaxial growth D. Optical properties A. Semiconductors LPE TDS Epitaxial layers Semiconductor materials Vapor pressure Doping Threshold current Mass spectroscopy Hall effect Mid infrared radiation Thin films Lead tellurides Semiconductor lasers p n junctions Electron mobility Carrier density Homojunctions
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