Growth of Ba-hexaferrite films on single crystal 6-H SiC

• Published in: Journal of magnetism and magnetic materials Vol. 301; no. 1; pp. 166 - 170
• Main Authors: Chen, Zhoahui, Yang, Aria, Yoon, S.D., Ziemer, Katherine, Vittoria, Carmine, Harris, V.G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-06-2006; Elsevier Science
• Subjects: Ba-hexaferrite; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Physics; Silicon carbide; Ba-hexaferrite; Silicon carbide; Films; 75.70.−I; 75.30.−m; Atomic force microscopy; Hexagonal ferrites; 75.30.-m Ba-hexaferrite; Magnetization; 75.70.-I; Pulsed laser deposition; Integrated circuits; g-factor; Monocrystals; Microwave circuits; Microstructure; Application
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2005.06.030

Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5
μm in diameter) oriented with the
c-axis perpendicular to the film plane. X-ray
θ–2
θ diffraction measurements indicate a strong
(
0
,
0
,
2
n
)
alignment of crystallites. The magnetization for low-pressure deposition (20
mTorr) is comparable to bulk values (4
πM
s∼4320
G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits.