Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is studied based on the growth parameters employing X-ra...

Full description

Bibliographic Details

Published in:	APL materials Vol. 7; no. 2; pp. 022516 - 022516-11
Main Authors:	Kneiß, M., Hassa, A., Splith, D., Sturm, C., von Wenckstern, H., Schultz, T., Koch, N., Lorenz, M., Grundmann, M.
Format:	Journal Article
Language:	English
Published:	AIP Publishing LLC 01-02-2019
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!