Influence of in-plane field on the stability of vertical Bloch lines in the walls of OHB at various bias fields

• Published in: Journal of magnetism and magnetic materials Vol. 302; no. 2; pp. 490 - 494
• Main Authors: Guo, G.X., Wang, L.N., Zhen, C.M., Nie, X.F.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-07-2006; Elsevier Science
• Subjects: Bias field; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Domain effects, magnetization curves, and hysteresis; Domain structure (including magnetic bubbles); Domain walls and domain structure; Exact sciences and technology; In-plane field; Magnetic properties and materials; Magnetic properties of surface, thin films and multilayers; Ordinary hard bubbles; Physics; Vertical Bloch line (VBL); Vertical Bloch line (VBL); Bias field; In-plane field; Ordinary hard bubbles; 75.70Kw; Magnetic bubbles; Bloch walls; Garnets; Domain structure; Magnetic domains; Domain walls; 75.70Kw Vertical Bloch line (VBL); Critical field
• ISSN: 0304-8853
• DOI: 10.1016/j.jmmm.2005.10.017

The stability of vertical Bloch line (VBL) chains subjected to in-plane field (
H
ip) was statistically studied for the ordinary hard bubbles (OHB) in garnet bubble films at various bias fields (
H
b). The dumbbell domains were also investigated. We found that (
H
ip
(1))
IID<(
H
ip
(1))
ID<(
H
ip
(1))
OHB and (
H
ip
(2))
IID=(
H
ip
(2))
ID=(
H
ip
(2))
OHB when keeping
H
b unchanged. With the increasing of
H
b, the in-plane field
H
ip
(1),
H
ip
*
and
H
ip
(2) all decrease, while the in-plane field range [
H
ip
(1),
H
ip
*
] and [
H
ip
(1),
H
ip
(2)] become narrower. Here,
H
ip
(1) is the initial critical in-plane field where VBLs in the walls of three types of hard domains are annihilated,
H
ip
*
stands for the in-plane field where the retention rate of three types of hard domains
R reduces to zero, and
H
ip
(2) is the lowest in-plane field where VBLs in their corresponding hard domains are annihilated completely.