Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate
A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variat...
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Published in: | Optics express Vol. 22 Suppl 5; no. S5; pp. A1380 - A1388 |
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Abstract | A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost. |
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AbstractList | A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost. |
Author | Wang, Chao Yin, Stuart Shizhuo Zhu, Wenbin Yao, Jimmy Lin, Xiaoyan Zou, Jun Luo, Claire |
Author_xml | – sequence: 1 givenname: Stuart Shizhuo surname: Yin fullname: Yin, Stuart Shizhuo – sequence: 2 givenname: Chao surname: Wang fullname: Wang, Chao – sequence: 3 givenname: Wenbin surname: Zhu fullname: Zhu, Wenbin – sequence: 4 givenname: Jimmy surname: Yao fullname: Yao, Jimmy – sequence: 5 givenname: Jun surname: Zou fullname: Zou, Jun – sequence: 6 givenname: Xiaoyan surname: Lin fullname: Lin, Xiaoyan – sequence: 7 givenname: Claire surname: Luo fullname: Luo, Claire |
BackLink | https://www.ncbi.nlm.nih.gov/pubmed/25322193$$D View this record in MEDLINE/PubMed |
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CitedBy_id | crossref_primary_10_1016_j_ijleo_2019_01_043 crossref_primary_10_1109_JDT_2016_2557841 crossref_primary_10_3390_cryst13030373 crossref_primary_10_1016_j_jlumin_2020_117703 crossref_primary_10_1016_j_apsusc_2016_03_208 crossref_primary_10_1364_OE_374548 crossref_primary_10_3390_app8101842 crossref_primary_10_1016_j_mseb_2020_114911 crossref_primary_10_1149_2_0191503jss crossref_primary_10_1364_OME_6_002052 |
Cites_doi | 10.1109/JSTQE.2009.2013476 10.1016/S0169-4332(99)00228-7 10.1038/nphoton.2008.47 10.1007/BF01567637 10.1063/1.111832 10.1088/0268-1242/12/3/004 10.1021/nl051689e 10.1143/JJAP.38.3976 10.1063/1.3443734 10.1063/1.1757014 10.1016/S0169-4332(97)00218-3 10.1063/1.122164 10.1063/1.3588201 10.1016/S0022-0248(98)00292-9 10.1143/JJAP.37.L1358 10.1143/JJAP.37.L479 10.1016/j.apsusc.2011.04.099 10.1103/PhysRevB.72.195422 10.1143/JJAP.34.L1332 10.1063/1.1433164 10.1038/nmat2037 10.1126/science.1108712 10.1103/PhysRevB.54.2491 |
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