INTERFACIAL EFFECTS ON THE CRYSTALLIZATION TEMPERATURE OF PMN-PT FILMS DEPOSITED ON LNO OR Pt BOTTOM ELECTRODES
PMN-PT (70/30) thin films were deposited by rf magnetron sputtering on silicon substrate. Two types of bottom electrodes were studied: classical TiO x /Pt and LNO. The first one is deposited by sputtering and the LNO by sol gel. Depending on the electrode nature, thickness, ... the diffusion such as...
Saved in:
| Published in: | Integrated ferroelectrics Vol. 98; no. 1; pp. 171 - 182 |
|---|---|
| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
Taylor & Francis Group
01-01-2008
|
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | PMN-PT (70/30) thin films were deposited by rf magnetron sputtering on silicon substrate. Two types of bottom electrodes were studied: classical TiO
x
/Pt and LNO. The first one is deposited by sputtering and the LNO by sol gel. Depending on the electrode nature, thickness, ... the diffusion such as oxygen, lead or other species are completely different. PMN-PT annealing temperature were studied in the range of 450 to 700°C; the interface quality is directly related to the annealing temperature. Our study was focused on the bottom electrode/PMN-PT thin films interfaces. We present dielectric and ferroelectric. They are analysed in the view of interfacial layers (nature and thickness), films structure and microstructure. |
|---|---|
| Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
| ISSN: | 1058-4587 1607-8489 |
| DOI: | 10.1080/10584580802093520 |