Development of tin oxide synthesis by plasma-enhanced chemical vapor deposition
Transparent conducting oxide (TCO) thin films have been synthesized to date primarily by either physical vapor deposition or thermal chemical vapor deposition. Plasma-enhanced chemical vapor deposition (PECVD) offers potential advantages over these techniques, but it has not been applied extensively...
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| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 19; no. 6; pp. 2762 - 2766 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
01-11-2001
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| Abstract | Transparent conducting oxide (TCO) thin films have been synthesized to date primarily by either physical vapor deposition or thermal chemical vapor deposition. Plasma-enhanced chemical vapor deposition (PECVD) offers potential advantages over these techniques, but it has not been applied extensively to TCO synthesis. In this article we report on the use of PECVD to deposit transparent, conducting tin oxide films from mixtures of
SnCl
4
and
O
2
.
These films were deposited on glass substrates at temperatures between 150 and
350 °
C
.
The growth rate, optical, electrical, and structural properties were examined as a function of plasma power, substrate temperature, and gas composition. Increasing rf power revealed a rise in deposition rate with no effect on electrical properties, while both substrate temperature and oxygen flow rate were found to significantly influence resistivity. The effect of annealing was also examined, and it was found that annealing at
250 °
C
significantly improved the electrical properties. The optical transparency of all films was greater than 86% in the visible spectrum, and electrical resistivities as low as
2.1×10
−3
Ω
cm
have been achieved. |
|---|---|
| AbstractList | Transparent conducting oxide (TCO) thin films have been synthesized to date primarily by either physical vapor deposition or thermal chemical vapor deposition. Plasma-enhanced chemical vapor deposition (PECVD) offers potential advantages over these techniques, but it has not been applied extensively to TCO synthesis. In this article we report on the use of PECVD to deposit transparent, conducting tin oxide films from mixtures of
SnCl
4
and
O
2
.
These films were deposited on glass substrates at temperatures between 150 and
350 °
C
.
The growth rate, optical, electrical, and structural properties were examined as a function of plasma power, substrate temperature, and gas composition. Increasing rf power revealed a rise in deposition rate with no effect on electrical properties, while both substrate temperature and oxygen flow rate were found to significantly influence resistivity. The effect of annealing was also examined, and it was found that annealing at
250 °
C
significantly improved the electrical properties. The optical transparency of all films was greater than 86% in the visible spectrum, and electrical resistivities as low as
2.1×10
−3
Ω
cm
have been achieved. Transparent conducting oxide (TCO) thin films have been synthesized to date primarily by either physical vapor deposition or thermal chemical vapor deposition. Plasma-enhanced chemical vapor deposition (PECVD) offers potential advantages over these techniques, but it has not been applied extensively to TCO synthesis. In this article we report on the use of PECVD to deposit transparent, conducting tin oxide films from mixtures of SnCl4 and O2. These films were deposited on glass substrates at temperatures between 150 and 350 °C. The growth rate, optical, electrical, and structural properties were examined as a function of plasma power, substrate temperature, and gas composition. Increasing rf power revealed a rise in deposition rate with no effect on electrical properties, while both substrate temperature and oxygen flow rate were found to significantly influence resistivity. The effect of annealing was also examined, and it was found that annealing at 250 °C significantly improved the electrical properties. The optical transparency of all films was greater than 86% in the visible spectrum, and electrical resistivities as low as 2.1×10−3 Ω cm have been achieved. The use of plasma enhanced chemical vapor deposition (PECVD) to synthesize transparent conducting oxide (TCO) thin films was demonstrated. A stainless steel thin film deposition system was used for tin oxide film deposition on glass substrate. Plasma power, substrate temperature and gas composition were studied to analyze growth rate, optical, electrical and structural properties of the films. Analysis suggested that increase in radio frequency (rf) power increases the deposition rate and annealing at 250 degree C improves the electrical properties. |
| Author | Wolden, Colin A. Alexander, Robert T. Bai, Mailasu Robbins, Joshua J. Vincent, Tyrone L. Huang, Yen-Jung |
| Author_xml | – sequence: 1 givenname: Joshua J. surname: Robbins fullname: Robbins, Joshua J. organization: Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 – sequence: 2 givenname: Robert T. surname: Alexander fullname: Alexander, Robert T. organization: Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 – sequence: 3 givenname: Mailasu surname: Bai fullname: Bai, Mailasu organization: Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 – sequence: 4 givenname: Yen-Jung surname: Huang fullname: Huang, Yen-Jung organization: Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 – sequence: 5 givenname: Tyrone L. surname: Vincent fullname: Vincent, Tyrone L. organization: Division of Engineering, Colorado School of Mines, Golden, Colorado 80401 – sequence: 6 givenname: Colin A. surname: Wolden fullname: Wolden, Colin A. organization: Department of Chemical Engineering, Colorado School of Mines, Golden, Colorado 80401 |
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| Cites_doi | 10.1116/1.580429 10.1149/1.2086517 10.1016/S0040-6090(96)09155-9 10.1063/1.339030 10.1016/0040-6090(93)90443-S 10.1063/1.113052 10.1063/1.92751 10.1149/1.1391900 10.1116/1.581888 10.1016/0169-4332(91)90114-Y 10.1016/0167-577X(94)90203-8 |
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| Snippet | Transparent conducting oxide (TCO) thin films have been synthesized to date primarily by either physical vapor deposition or thermal chemical vapor deposition.... The use of plasma enhanced chemical vapor deposition (PECVD) to synthesize transparent conducting oxide (TCO) thin films was demonstrated. A stainless steel... |
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| SubjectTerms | Annealing Carrier concentration Chemical reactors Electric conductivity Film growth Mathematical models Plasma enhanced chemical vapor deposition Substrates Synthesis (chemical) Tin compounds |
| Title | Development of tin oxide synthesis by plasma-enhanced chemical vapor deposition |
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