Gate Metal Dependent Reverse Leakage Mechanisms in AlGaN/GaN Schottky Diode

Gate Metal Dependent Reverse Leakage Mechanisms in AlGaN/GaN Schottky Diode

The dependence of the gate leakage mechanism in the AlGaN/GaN Schottky diode on the metal--semiconductor (MS) interface state has been investigated. Schottky gates with Au, Pt, Pd, and Ni showed the remarkably different gate leakage mechanisms in the reverse direction. Through the analysis of the te...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics Vol. 52; no. 7; pp. 070203 - 070203-3
Main Authors: Shin, Jong-Hoon, Park, Jinhong, Jang, SeungYup, Jang, Tae-Hoon, Kim, Kyu Sang
Format: Journal Article
Language:English
Published: The Japan Society of Applied Physics 01-07-2013
Subjects:
Aluminum gallium nitrides
Electron tunneling
Energy levels
Gallium nitrides
Gates
Leakage
Leakage current
Schottky diodes
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Summary:The dependence of the gate leakage mechanism in the AlGaN/GaN Schottky diode on the metal--semiconductor (MS) interface state has been investigated. Schottky gates with Au, Pt, Pd, and Ni showed the remarkably different gate leakage mechanisms in the reverse direction. Through the analysis of the temperature dependent reverse leakage currents, it is shown that the discrete energy levels of MS interface states are the key factor in determining whether the leakage mechanism at the high temperature over 300 K is caused by the electron tunneling or by the Frenkel--Poole emission from the MS interface state to the conductive dislocation state.
Bibliography:I$--$V$--$T$ measurement of reverse leakage current of Au, Pt, Pd, and Ni samples. Dashed lines indicate the fitting range of Frenkel--Poole emission. (Color online) Fitting result of (a) $\log(J/F)$ as a function $\sqrt{F}$ and (b) $-q\varphi_{\text{T}}/kT + \log C$ versus $1000/T$ with subtracting tunneling leakage current measured at the temperature of 50 K (dashed lines are trend lines for fitting each slopes). (Color online) (a) Obtained energy ($\varphi_{\text{T}}$) for excitation required for Frenkel--Poole emission process by fitting the slope of data in Fig. (b). (b) Schematic figure of revealed leakage mechanism depending on the metal species.
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ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.070203