Enhanced Model of Conductive Filament-Based Memristor via Including Trapezoidal Electron Tunneling Barrier Effect

Memristors exhibit very promising features such as nonvolatility and small area. Several types of memristors have been developed in the last decade using different materials along with physical models explaining their behaviors. In this paper, we modify a previously published model to account for a...

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Bibliographic Details
Published in:	IEEE transactions on nanotechnology Vol. 15; no. 3; pp. 484 - 491
Main Authors:	Hassan, Amr Mahmoud, Fahmy, Hossam A. H., Rafat, Nadia Hussein
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-05-2016 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Barriers Constants Data models Electrodes Electron tunneling Integrated circuit modeling Mathematical model Mathematical models Memory devices memristor Memristors Nanotechnology oscillators Platinum Potential barriers Resistors SPICE modeling trapezoidal barrier Tunneling oscillators trapezoidal barrier Memristor tunneling SPICE modeling
Online Access:	Get full text
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