Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

• Published in: Applied physics letters Vol. 101; no. 9; p. 92107
• Main Authors: Oh, Seungha, Seob Yang, Bong, Jang Kim, Yoon, Sook Oh, Myeong, Jang, Mi, Yang, Hoichang, Kyeong Jeong, Jae, Seong Hwang, Cheol, Joon Kim, Hyeong
• Format: Journal Article
• Language: English
• Published: 27-08-2012
• Subjects: Combinatorial analysis; Illumination; Indium; Instability; Semiconductor devices; Stability; Thin film transistors; Zinc oxide
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4748884

This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The field-effect mobility and sub-threshold swing were much improved with increasing In fraction; 41.0 cm2/Vs and 0.2 V/decade, respectively, at 85 at. % In, compared to 1.1 cm2/Vs and 2.4 V/decade of ZnO TFTs. In contrast, a local minimum negative bias illumination stress instability was observed near 73-77 at. % In. This behavior was explained by a poly-crystalline to amorphous phase transition in IZO thin films.