Probing the electrical transport properties of intrinsic InN nanowires

• Published in: Applied physics letters Vol. 102; no. 7
• Main Authors: Zhao, S., Salehzadeh, O., Alagha, S., Kavanagh, K. L., Watkins, S. P., Mi, Z.
• Format: Journal Article
• Language: English
• Published: 18-02-2013
• Subjects: Bias; Electron mobility; Nanocomposites; Nanomaterials; Nanostructure; Nanowires; Scanning electron microscopy; Transport properties
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4792699

We have studied the electrical transport properties of intrinsic InN nanowires using an electrical nanoprobing technique in a scanning electron microscope environment. It is found that such intrinsic InN nanowires exhibit an ohmic conduction at low bias and a space charge limited conduction at high bias. It is further derived that such InN nanowires can exhibit a free carrier concentration as low as ∼1013 cm−3 and possess a very large electron mobility in the range of 8000–12 000 cm2/V s, approaching the theoretically predicted maximum electron mobility at room temperature. In addition, charge traps are found to distribute exponentially just below the conduction band edge, with a characteristic energy ∼65 meV.