Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

• Published in: Applied physics letters Vol. 101; no. 6; p. 63104
• Main Authors: Pinto, S., Krishna, R., Dias, C., Pimentel, G., Oliveira, G. N. P., Teixeira, J. M., Aguiar, P., Titus, E., Gracio, J., Ventura, J., Araujo, J. P.
• Format: Journal Article
• Language: English
• Published: 06-08-2012
• Subjects: Devices; Electrodes; Graphene; Migration; Nickel; Oxides; Switching; Thin films; Voltage
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4742912

The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by the migration of oxygen groups, depending on the fabrication process. We also show that GO-based structures possess activity-dependent modification capabilities, emphasized by the increase/decrease of device conductance after consecutive voltage sweeps of opposite polarity. Our results allow a better understanding of bipolar RS, towards future non-volatile memories and neuromorphic systems.