Optical properties of zinc nitride thin films fabricated by rf-sputtering from ZnN target

• Published in: Thin solid films Vol. 516; no. 22; pp. 8170 - 8174
• Main Authors: Voulgaropoulou, P., Dounis, S., Kambilafka, V., Androulidaki, M., Ružinský, M., Šály, V., Prokein, P., Viskadourakis, Z., Tsagaraki, K., Aperathitis, E.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30-09-2008; Elsevier Science
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Oxidation; Physics; Zinc nitride; Zinc oxide; Zinc oxide; Annealing; Oxidation; Zinc nitride; Optical properties; Transparency; Photonic band gap; Electrical conductivity; Photoluminescence; N type conductivity; Heat treatments; Thin films; Cathode sputtering; Excitons; Adsorption; Physical vapor deposition; Wide band gap semiconductors; Sputter deposition; Thermal annealing; Radiofrequency sputtering
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.04.025

RF-magnetron sputtering was employed to deposit zinc nitride films, from zinc nitride target, in plasma containing a mixture of Ar–N
2 gases. The effect of ambient atmosphere as well as thermal treatments (annealing in nitrogen and oxidation) on the optical properties of the films were examined. The transparency and conductivity of the films just after deposition were dependent on the amount of Zn in the structure. The films exhibited n-type conductivity and wide optical band gap. Annealing improved their transparency but they became more resistive. Oxygen was detected in films remained in the ambient atmosphere for a long period of time just after deposition, affecting transmissivity. Annealing promoted adsorption of oxygen in their structure, and the optical properties of high temperature annealed films resembled those of zinc oxide films having nitrogen as acceptor dopant. Band-edge emission peaks arising from acceptor exciton as well as nitrogen-related defect centers were revealed by low temperature photoluminescence.