Semiconductor lasers with internal wavelength selection

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 47; no. 1; pp. 122 - 126
• Main Authors: Zolotarev, V. V., Leshko, A. Yu, Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Podoskin, A. A., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Arsent’ev, I. N., Vavilova, L. S., Bakhvalov, K. V., Tarasov, I. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 2013; Springer
• Subjects: Invisibility; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Semiconductor industry; Semiconductor lasers; Drive Current; Laser Structure; Lasing Spectrum; Quantum Well; Metal Contact
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782613010247

Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The electroluminescence and stimulated emission spectra and light-current characteristics of diffraction-grating laser diodes have been studied. A substantial narrowing of both the luminescence and stimulated emission spectra was achieved due to the spectral selectivity of the grating. The maximum output optical power was 1 W at a drive current of 4 A. At the highest power, the lasing spectrum had a FWHM of ∼2 Å. A narrowing of the lasing spectrum of the diffraction-grating laser by tens of times was demonstrated, compared with that of a laser with a Fabry-Perot cavity.