Few-layer graphene under high pressure: Raman and X-ray diffraction studies

• Published in: Solid state communications Vol. 154; pp. 15 - 18
• Main Authors: Clark, S.M., Jeon, Ki-Joon, Chen, Jing-Yin, Yoo, Choong-Shik
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01-01-2013; Elsevier
• Subjects: A. Graphene; C. Raman spectroscopy; C. X-ray diffraction; Condensed matter: structure, mechanical and thermal properties; E. High-pressure; E. Synchrotron radiation; Exact sciences and technology; Lattice dynamics; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Phonons in low-dimensional structures and small particles; Physics; Structure of solids and liquids; crystallography; C. Raman spectroscopy; E. Synchrotron radiation; E. High-pressure; A. Graphene; C. X-ray diffraction; Raman spectra; Pressure effects; Long-range order; XRD; Hybridization; Lattice parameters; High pressure; Lamellar structure; Graphene; Hydrostatic pressure; Phonon mode; Synchrotron radiation
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2012.10.002

The effect of pressure on the structure of few-layer graphene has been investigated to 50GPa in both quasi-hydrostatic and non-hydrostatic conditions, using X-ray diffraction and Raman spectroscopy. The results indicate that few-layer graphene loses its long-range order at the critical interlayer distance of ∼2.8Å (or above ∼18GPa), while maintaining the local sp2 hybridization in the layer to 50GPa. This suggests that graphene not only has the highest stability of all graphitic layer structures, but also becomes one of the most healable structures under large stress.
► Few-layer graphene is subjected to hydrostatic and non-hydrostatic pressure. ► X-ray and Raman scattering patterns were measured. ► The basal peak position was found to vary with pressure transmitting fluid. ► The diffraction pattern disappears at 18GPa but the Raman pattern does not. ► It is the graphitic material with the highest stability and most healable structure.