Etching with electron beam generated plasmas

A modulated electron beam generated plasma has been used to dry etch standard photoresist materials and silicon. Oxygen–argon mixtures were used to etch organic resist material and sulfur hexafluoride mixed with argon or oxygen was used for the silicon etching. Etch rates and anisotropy were determi...

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Bibliographic Details

Published in:	Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 22; no. 6; pp. 2276 - 2283
Main Authors:	Leonhardt, D., Walton, S. G., Muratore, C., Fernsler, R. F., Meger, R. A.
Format:	Journal Article
Language:	English
Published:	United States 01-11-2004
Subjects:	ARGON CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ELECTRON BEAMS ETCHING EV RANGE 100-1000 ION BEAMS ORGANIC SULFUR COMPOUNDS OXYGEN PASSIVATION PLASMA SILICON SULFUR FLUORIDES TEMPERATURE RANGE 0273-0400 K resists
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