n-type anode layer, high-power MWIR superlattice LED

n-type anode layer, high-power MWIR superlattice LED

Cascaded superlattice LEDs were designed, grown, fabricated, and tested with an n-type anode structure consisting of a variably doped n-GaSb buffer layer and a variable tunnel junction of n-GaxIn1−xAsySb1−y/p-GaSb in place of a conventional p-doped anode contact layer. The elimination of p-doped con...

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Bibliographic Details
Published in:Applied physics letters Vol. 111; no. 24
Main Authors: Muhowski, A. J., Ricker, R. J., Boggess, T. F., Prineas, J. P.
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 11-12-2017
Subjects:
Anodes
Applied physics
Buffer layers
Radiance
Superlattices
Tunnel junctions
Online Access:Get full text
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Description
Summary:Cascaded superlattice LEDs were designed, grown, fabricated, and tested with an n-type anode structure consisting of a variably doped n-GaSb buffer layer and a variable tunnel junction of n-GaxIn1−xAsySb1−y/p-GaSb in place of a conventional p-doped anode contact layer. The elimination of p-doped contact layers from the structure was found to reduce parasitic optical absorption and ohmic loss. After selecting the ideal design from the 4 stage test structures, a nominally identical 16 stage n-type anode structure was grown, yielding an MWIR radiance of 6.7 W/cm2/sr.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5006045