Effects of Dislocation on Planar Channelling of Energetic H + and He + Ions

Planar channelling of MeV H+ and He+ ions was studied using phosphorus implanted silicon crystals with a well-defined network of edge dislocations. The energy dependence of dechannelling at dislocation is shown to be proportional to the square root of the energy of the ion. The dechannelling process...

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Bibliographic Details
Published in:	Journal of the Physical Society of Japan Vol. 49; no. 6; pp. 2319 - 2325
Main Authors:	Mannami, Michi-hiko, Kimura, Kenji, Kyoshima, Akira, Matsushita, Mitsuyoshi, Natsuaki, Nobuyoshi
Format:	Journal Article
Language:	English
Published:	Tokyo The Physical Society of Japan 01-01-1980
Online Access:	Get full text
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Summary:	Planar channelling of MeV H+ and He+ ions was studied using phosphorus implanted silicon crystals with a well-defined network of edge dislocations. The energy dependence of dechannelling at dislocation is shown to be proportional to the square root of the energy of the ion. The dechannelling processes of energetic charged particles at extended dislocation are discussed.
ISSN:	0031-9015 1347-4073
DOI:	10.1143/JPSJ.49.2319