Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 46; no. 8; pp. 1027 - 1031
• Main Authors: Zhukov, A. E., Asryan, L. V., Shernyakov, Yu. M., Maximov, M. V., Zubov, F. I., Kryzhanovskaya, N. V., Yvind, K., Semenova, E. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-08-2012; Springer
• Subjects: Analysis; Lasers; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Quantum wells; Waveguides; Internal Loss; Conventional Structure; Laser Structure; Threshold Current Density; Cavity Length
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782612080246

The temperature sensitivity of the threshold-current density in quantum-well lasers is studied and the factors affecting the characteristic temperature and its dependence on optical losses are analyzed. It is shown that the inclusion of asymmetric potential barriers (one barrier on each side of the quantum well), which prevent the formation of bipolar carrier population in the waveguide region and lead to weakening of the temperature dependences of the transparency-current density, the gain-saturation parameter and, consequently, to a higher characteristic temperature for both long- and short-cavity laser diodes.