Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates

We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and epitaxial lateral overgrowth (ELO) on a 4-in. sapphire substrate. The nanoscale ELO improved the crystal quality of overgrown ep...

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Bibliographic Details

Published in:	Applied physics letters Vol. 110; no. 19
Main Authors:	Lee, Donghyun, Lee, Jong Won, Jang, Jeonghwan, Shin, In-Su, Jin, Lu, Park, Jun Hyuk, Kim, Jungsub, Lee, Jinsub, Noh, Hye-Seok, Kim, Yong-Il, Park, Youngsoo, Lee, Gun-Do, Park, Yongjo, Kim, Jong Kyu, Yoon, Euijoon
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 08-05-2017
Subjects:	Aluminum gallium nitrides Applied physics Coalescing Epitaxial growth Epitaxial layers Injection current Light emitting diodes Nanospheres Organic light emitting diodes Photons Sapphire Substrates Ultraviolet radiation
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