Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 46; no. 9; pp. 1211 - 1215
• Main Authors: Shashkin, I. S., Vinokurov, D. A., Lyutetskiy, A. V., Nikolaev, D. N., Pikhtin, N. A., Rudova, N. A., Sokolova, Z. N., Slipchenko, S. O., Stankevich, A. L., Shamakhov, V. V., Veselov, D. A., Bakhvalov, K. V., Tarasov, I. S.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01-09-2012; Springer
• Subjects: Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Semiconductor lasers; Semiconductors; Specific gravity; Waveguides; Active Region; Laser Structure; Semiconductor Laser; GaAs; Quantum Well
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782612090217

The temperature dependences of the threshold current density and threshold concentration in semiconductor lasers based on MOVPE-grown asymmetric separate-confinement heterostructures with an extended waveguide have been studied (wavelengths λ = 1050–1070). It is shown that the temperature dependence of the threshold current density in semiconductor lasers becomes markedly stronger at above-room temperatures, which is due to temperature-induced carrier delocalization into the waveguide layers of a laser heterostructure. It was found that the sharp decrease in the thermal stability of the threshold current density with increasing temperature correlates with the coincidence of the Fermi level with the conduction-band bottom of the waveguide layer in the laser heterostructure. It is experimentally demonstrated that an increase in the energy depth and number of quantum wells in the active region of a semiconductor laser improves the thermal stability of the threshold current density. It is demonstrated that the characteristic parameter
T
0
attains a value of 220 K in the temperature range from −20 to +70°C.