1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intrac...

Full description

Saved in:

Bibliographic Details
Published in:	Optics express Vol. 20; no. 8; pp. 9046 - 9051
Main Authors:	Rantamäki, Antti, Rautiainen, Jussi, Lyytikäinen, Jari, Sirbu, Alexei, Mereuta, Alexandru, Kapon, Eli, Okhotnikov, Oleg G
Format:	Journal Article
Language:	English
Published:	United States 09-04-2012
Subjects:	Equipment Design Lasers, Semiconductor Lasers, Solid-State Light Optical Phenomena
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1094-4087 1094-4087
DOI:	10.1364/oe.20.009046