Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection
Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed ph...
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Published in: | Applied physics letters Vol. 76; no. 11; pp. 1380 - 1382 |
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Main Authors: | , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
13-03-2000
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Online Access: | Get full text |
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Summary: | Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias currents going from optical absorption to gain of the device. The four-wave mixing signal from 140 fs pulses shows a transition from a delayed photon-echo response in the absorption regime to a prompt free polarization decay in the gain regime. This corresponds to a pronounced reduction of the dephasing time from 250 fs at zero bias to less than 50 fs at the maximum applied current. The four-wave mixing response at transparency of the device shows a composite structure with both photon echo and free-polarization decay. This is a signature of the digital occupation number in quantum dots, resulting at transparency in a signal from dots occupied with either zero or two excitons corresponding to absorption or gain of the dot ground state. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.126038 |