Silicon-Based Multilayer Waveguides for Integrated Photonic Devices from the Near to Mid Infrared

Advancements in spectroscopy, quantum optics, communication, and sensing require new classes of integrated photonic devices to host a wide range of non-linear optical processes involving wavelengths from the visible to the infrared. In this framework, waveguide (WG) structures designed with innovati...

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Bibliographic Details
Published in:Applied sciences Vol. 11; no. 3; p. 1227
Main Authors: García, Iñaki López, Siciliani de Cumis, Mario, Mazzotti, Davide, Galli, Iacopo, Cancio Pastor, Pablo, De Natale, Paolo
Format: Journal Article
Language:English
Published: Basel MDPI AG 01-02-2021
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Summary:Advancements in spectroscopy, quantum optics, communication, and sensing require new classes of integrated photonic devices to host a wide range of non-linear optical processes involving wavelengths from the visible to the infrared. In this framework, waveguide (WG) structures designed with innovative geometry and materials can play a key role. We report both finite element modeling and experimental characterization of silicon nitride multilayer WGs from the visible to the mid-infrared spectral regions. The simulations evaluated optical behavior and mechanical stress as a function of number of WG layers and photonic structure dimensions. WGs were optimized for waveguiding at 1550 nm and 2640 nm. Experimental characterization focused on optical behavior and coupling losses from 532 nm to 2640 nm. Measured losses in WGs indicate a quasi-perfect waveguiding behavior in the IR range (with losses below 6 dB), with a relevant increase (up to 20 dB) in the visible range.
ISSN:2076-3417
2076-3417
DOI:10.3390/app11031227