Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate

• Published in: Electronic materials letters Vol. 10; no. 1; pp. 107 - 110
• Main Authors: Kim, Woo-Hee, Son, Jong Yeog
• Format: Journal Article
• Language: English
• Published: Dordrecht Springer Netherlands 2014; 대한금속·재료학회
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed Matter Physics; Materials Science; Nanotechnology; Nanotechnology and Microengineering; Optical and Electronic Materials; 전자/정보통신공학; NaNbO; ferroelectric polarization; thin film; piezoelectric force microscopy; ferroelectric domain wall energy; pulsed laser deposition
• ISSN: 1738-8090; 2093-6788
• DOI: 10.1007/s13391-013-3120-4

Highly (111)-oriented polycrystalline NaNbO
3
(NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer layers were employed between Pt bottom electrodes and glass substrates. The NNO thin film exhibited good ferroelectricity with high remanent polarization (2
P
r
≈ 46 µC/cm
2
) and leakage current density (∼2 × 10
−6
A/cm
2
at 500 kV/cm). Based on a piezoelectric force microscope study, it is demonstrated that the NNO thin film with triangular grains has ferroelectric domain wall energy slightly less than PbTiO
3
thin films.